C₆₀: A host lattice for the intercalation of oxygen?WOHLERS, M; WERNER, H; BELZ, T et al.Mikrochimica acta (1966. Print). 1997, Vol 125, Num 1-4, pp 401-406, issn 0026-3672Conference Paper

The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clustersMCQUAID, S. A; NEWMAN, R. C; MUNOZ, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 171-174, issn 0921-5107Conference Paper

Influence of the first thermal cycles of an IC process on oxygen precipitation in CZ silicon wafers: a detailed analysisJOLY, J. P; ROBERT, V.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 105-111, issn 0268-1242Article

Hetherogeneous precipitation in oxygen-implanted siliconCEROFOLINI, G. F; BERTONI, S; MEDA, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 26-29, issn 0921-5107Conference Paper

Oxygen related defects in germaniumCLAUWS, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 213-220, issn 0921-5107Conference Paper

Geometrical configuration of interstitial oxygen in silicon and in germaniumLIZON-NORDSTRÖM, A; YNDURAIN, F.Solid state communications. 1994, Vol 89, Num 9, pp 819-822, issn 0038-1098Article

Oxygen diffusion and precipitation in Czochralski siliconNEWMAN, R. C.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 25, pp R335-R365, issn 0953-8984Article

Silicon on thin insulator : prediction of the oxygen fluence required for the formation of a continuous buried oxideCEROFOLINI, G. F; BERTONI, S; MEDA, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 172-180, issn 0921-5107Article

Oxygen content of substrates and tunnel oxide quality : an in-line systematic analysisSOTTOCASA, E; ILLUZZI, F; NAHMAD, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 187-191, issn 0921-5107Conference Paper

Stress-induced oxygen precipitation in Cz-SiMISIUK, A; SURMA, B; HARTWIG, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 30-32, issn 0921-5107Conference Paper

Luminescence of oxygen-rare gas exciplex compounds in rare gas matricesBELOV, A. G; FUGOL, I. Ya; YURTAEVA, E. M et al.Journal of luminescence. 2000, Vol 91, Num 1-2, pp 107-120, issn 0022-2313Article

Temperature dependence of photoluminescence spectra of C₆₀ films and a luminescence related to oxygen moleculesHABUCHI, H; ITOH, T; NITTA, S et al.Applied surface science. 1997, Vol 113114, pp 286-290, issn 0169-4332Conference Paper

X-ray diffraction patterns of C₆₀ films by the thin film method and the intercalation of O₂ITOH, T; NITTA, S; NONOMURA, S et al.Applied surface science. 1997, Vol 113114, pp 282-285, issn 0169-4332Conference Paper

Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopyVEVE, C; STEMMER, M; MARTINUZZI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 200-203, issn 0921-5107Conference Paper

Simulation of x-ray section topograph images of oxygen precipitates in siliconHOLLAND, A. J; TANNER, B. K.Journal of physics. D, Applied physics (Print). 1995, Vol 28, Num 4A, pp A27-A32, issn 0022-3727Conference Paper

Distribution function parameters determined from dynamic mechanical spectroscopy dataHERMIDA, E. B; POVOLO, F.Physica status solidi. B. Basic research. 1994, Vol 182, Num 2, pp 301-313, issn 0370-1972Article

L'addition d'oxygène peut-elle augmenter la production des cubilots ? = Can oxygen addition increase the cupola production ?KATZ, Seymour; GARREAU, Georges-Henri.Hommes et fonderie. 2002, Num 323, pp 23-25, issn 0018-4357Article

Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafersKIRSCHT, F. G; FURUKAWA, Y; SEIFERT, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 230-236, issn 0921-5107Conference Paper

Thermal donors in oxygen-containing siliconSAL'NIK, Z. A.Inorganic materials. 1995, Vol 31, Num 11, pp 1265-1269, issn 0020-1685Article

Co-precipitation of carbon and oxygen in silicon : the dominant flux criterionTAYLOR, W. J; GÖSELE, U. M; TAN, T. Y et al.Japanese journal of applied physics. 1993, Vol 32, Num 11A, pp 4857-4862, issn 0021-4922, 1Article

A copper-infiltrated carbon substrate for diamond depositionTING, Jyh-Ming; TSENG, J. S.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 77, Num 2, pp 213-217, issn 0921-5107Article

Enhanced modes of oxygen diffusion in siliconRAMAMOORTHY, M; PANTELIDES, S. T.Solid state communications. 1998, Vol 106, Num 5, pp 243-248, issn 0038-1098Article

Surface mode excitation in platelet SiO_x precipitates in siliconSASSELLA, A; PIVAC, B; ABE, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 221-224, issn 0921-5107Conference Paper

Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity siliconMIKELSEN, M; MONAKHOV, E. V; ALFIERI, G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195207.1-195207.6, issn 1098-0121Article

Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temneratureCAN CUI; DEREN YANG; XIANGYANG MA et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 13, pp 2442-2447, issn 0031-8965, 6 p.Article